Field-Effect Chiral Anomaly Devices with Dirac Semimetal

Charge-based field-effect transistors (FETs) greatly suffer from unavoidable carrier scattering and heat dissipation. Analogous to valley degree of freedom in semiconductors, chiral anomaly current in Weyl/Dirac semimetals is theoretically predicted to be nearly nondissipative over long distances, but still lacks experimental ways to efficiently control its transport. Here, field-effect chirality devices are demonstrated with Dirac semimetal PtSe₂, in which its Fermi level is close to the Dirac point in the conduction band owing to intrinsic defects. The chiral anomaly is further corroborated by the planar Hall effect and nonlocal valley transport measurement, which can also be effectively modulated by external fields, showing robust nonlocal valley transport with micrometer diffusion length. Similar to charge-based FETs, the chiral conductivity in PtSe₂ devices can be modulated by electrostatic gating with an ON/OFF ratio of more than 10³. Basic logic functions in the devices are also demonstrated with electric and magnetic fields as input signals.     

Simulations of NBI fast ion loss in the presence of toroidal field ripple on EAST

NBI fast ion losses in the presence of the toroidal field ripple on EAST have been investigated by using the orbit code GYCAVA and the NBI code TGCO. The ripple effect was included in the upgraded version of the GYCAVA code. It is found that loss regions of NBI fast ions are mainly on the low field side near the edge in the presence of ripple. For co-current NBIs, the synergy effect of ripple and Coulomb collision on fast ion losses is dominant, and fast trapped ions located on the low field side are easily lost. The ripple well loss and the ripple stochastic loss of fast ions have been identified from the heat loads of co-current NBI fast ions. The ripple stochastic loss and the collisioninduced loss are much larger than the ripple well loss. Heat loads of lost fast ions are mainly localized on the right side of the radio frequency wave antennas from the inside view toward the first wall. For counter-current NBIs, the first orbit loss due to the magnetic drift is the dominant loss channel. In addition, fast ion loss fraction with ripple and collision for each NBI linearly increases with the effective charge number, which is related to the pitch angle scattering effect.     

抗菌聚酯切片中锌含量测定方法的研究

介绍了一种以氧化锌为添加剂的抗菌聚酯,分别从样品处理、试验仪器、实验条件等方面讲述了几种测定抗菌聚酯切片中锌含量的测定方法,对是否含二氧化钛的抗菌聚酯切片给出建议测定方法,并总结了几种分析方法的优缺点.     

High-temperature oxidation behavior of monolithic Zr3[Al(Si)]4C6 and its composite incorporating 30vol% ZrB2-SiC: Providing a basis for broadening the service temperature

To provide a basis for the high-temperature oxidation of ultra-high temperature ceramics (UHTCs), the oxidation behavior of Zr₃[Al(Si)]₄C₆ and a novel Zr₃[Al(Si)]₄C₆-ZrB₂-SiC composite at 1500 °C were investigated for the first time. From the calculation results, the oxidation kinetics of the two specimens follow the oxidation dynamic parabolic law. Zr₃[Al(Si)]₄C₆ exhibited a thinner oxide scale and lower oxidation rate than those of the composite under the same conditions. The oxide scale of Zr₃[Al(Si)]₄C₆ exhibited a two-layer structure, while that of the composite exhibited a three-layer structure. Owing to the volatilization of B₂O₃ and the active oxidation of SiC, a porous oxide layer formed in the oxide scale of the composite, resulting in the degradation of its oxidation performance. Furthermore, the cracks and defects in the oxide scale of the composite indicate that the reliability of the oxide scale was poor. The results support the service temperature of the obtained ceramics.     

Theoretical investigation of intrinsic point defects and the oxygen migration behavior in rare earth hafnates

In this work, the composition-dependent point defect types and formation energies of RE₂Hf₂O₇ (RE = La, Ce, Pr, Nd, Pm, Sm, Eu and Gd) as well as the oxygen diffusion behavior are systematically investigated by first-principles calculations. The possible defect reactions and dominant defect complexes under stoichiometric and non-stoichiometric conditions are revealed. It is found that O Frenkel pairs are the predominant defect in stoichiometric pyrochlore hafnates. Hf-RE cation anti-site defects, accompanied by RE vacancies and/or oxygen interstitials, are stable in the non-stoichiometric case of HfO₂ excess. On the other hand, RE-Hf anti-site defects together with oxygen vacancies and/or RE interstitials are preferable in the case of RE₂O₃ excess. The energy barriers for the migration along the V_O48f - V_O48f pathway of pyrochlore hafnates were calculated to be between 0.81 eV and 0.89 eV. Based on these results, a defect engineering strategy is proposed and the pyrochlore hafnates investigated here are predicted to exhibit potential oxygen ionic conductivity.     

Influence of Sr ions on the structure and dielectric properties of Cu/Nb Co-doped BaTiO3 ceramics

Sr-modified Cu/Nb co-doped BaTiO₃ ceramics were prepared using solid-state reactions and the structures and dielectric properties were studied. All the samples had single-phase perovskite structures with no detectable secondary phases. In the low-temperature range, the dielectric constant decreased as the Sr content increased in the high- and low-frequency ranges. Two dielectric constant plateaus accompanied by dielectric relaxation peaks were present in the loss curves, and the relaxation process deviated from the Arrhenius law at low temperatures. The dielectric constants of different plateaus were related to inhomogeneous structures such as grain interiors and grain boundaries. The polarization strength of the grain boundaries in the low-frequency range increased with the temperature and that of the grain interiors demonstrated paraelectric behaviour in high-temperature ranges. An analysis of the electric modulus spectra indicated a close relationship between the relaxation process and resistivity of the grains for high-frequency relaxation. The impedance spectra at high temperatures consist of three electrical responses, corresponding to the effects of grains, grain boundaries, and electrodes. The dielectric relaxation appeared in high temperature range was related to the electrical properties of the grain boundaries.     

人工智能在智慧海洋建设中的应用

围绕人工智能与智慧海洋建设这条主线，论述人工智能、智慧海洋的概念，列举当前较为成熟的人工智能与海洋科技在海洋观测方面融合的切入点，初步展现一种海洋技术与装备智能化的发展路径，提出加快人工智能技术向智慧海洋建设赋能的几点建议。     

Numerical study on the loss of fast ions produced by minority ion cyclotron resonance heating in EAST

The classical prompt loss of fast ions produced by minority ion cyclotron resonance heating(ICRH)is studied by a guiding center orbit following code in the Experimental Advanced Superconducting Tokamak(EAST).It is found that the loss of fast ions produced by ICRH mainly appears in both ends of the resonance layer,while the loss of fast ions in the middle resonance layer is very small.The dominant fast loss comes from trapped ions,rather than from passing ions.Controlling the location of resonance layer at the plasma core may be more beneficial to the EAST tokamak ICRH.In addition,the loss distribution of fast ions is studied.The results show that the fast ions are mainly lost near the midplane in the poloidal direction,but almost uniformly in the toroidal direction.Moreover,we investigate the dependence of fast ion loss on the ICRH power.The simulation results show that the loss fraction of fast ions in both ends of the resonance region increases with the ion cyclotron range of frequencies(ICRF)power,but barely affects the loss of fast ions in the middle region.     

基于1D CNN与XGBoost的恶意代码纹理检测

恶意代码数量已经呈现爆炸式增长,对于恶意代码的检测防护显得尤为重要.近几年,基于深度学习的恶意代码检测方法开始出现,基于此,提出一种新的检测方法,将恶意代码二进制文件转化为十进制数组,并利用一维卷积神经网络(1 Dimention Convolutional Neural Networks,1D CNN)对数组进行分类和识别.针对代码家族之间数量不平衡的现象,该算法选择在分类预测上表现良好的XGBoost,并对Vision Research Lab中的25个不同恶意软件家族的9458个恶意软件样本进行了实验.实验结果表明,所提的方法分类预测精度达到了97％.     

柔性纤维结构超级电容器研究进展

为了提高电源器件与人体高曲率表面的适配性，电源器件突破平板结构的限制，衍生出了柔性纤维结构。柔性纤维超级电容器具有高功率密度、超长循环寿命和柔性舒适等特点有望成为最具前景的柔性可穿戴电源之一。因此，本文主要介绍了碳材料、过渡金属氧化物以及复合材料三种功能材料对柔性纤维超级电容器结构和性能的影响。每种材料凭借自身独特的性质在柔性纤维超级电容器器件中发挥着重要作用，并助力可穿戴电源器件的发展。